收藏本站
MBR20H90CTG & MBR20H100CTG
Vishay General Semiconductor
www.vishay.com For technical questions within your
region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
Document Number: 88856
Revision: 25-Mar-08
2
Note:
(1) Pulse test: 300 μs pulse width, 1 % duty cycle
Note:
(1) Automotive grade AEC Q101 qualified
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Maximum instantaneous forward voltage per diode
(1)
IF
= 10 A
IF
= 10 A
IF
= 20 A
IF
= 20 A
TJ
= 25 °C
TJ
= 125 °C
TJ
= 25 °C
TJ
= 125 °C
VF
0.80
0.64
0.87
0.74
0.85
0.70
0.93
0.80
V
Maximum reverse current per diode at working peak
reverse voltage (1)
TJ
= 25 °C
TJ
= 125 °C
IR
-
-
3.5
4.5
μA
mA
THERMAL CHARACTERISTICS (TC
= 25 °C unless otherwise noted)
PARAMETER SYMBOL MBR UNIT
Typical thermal resistance per diode RθJC
2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (G) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB MBR20H100CTG-E3/45 1.85 45 50/tube Tube
TO-220AB MBR20H100CTGHE3/45 (1)
1.85 45 50/tube Tube
Figure 1. Forward Derating Curve
0
4
8
12
16
20
24
0 100 125 150 17575
50
25
A
v
erage For
w
ard C
u
rrent (A)
Case Temperature (°C)
Figure 2. Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
1
10
100
50
25
75
100
125
150
175
TJ
= T
J
Max.
8.3 ms Single Half Sine-Wave
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
发布紧急采购，3分钟左右您将得到回复。

采购需求

(若只采购一条型号，填写一行即可)

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

发布成功！您可以继续发布采购。也可以进入我的后台，查看报价

*型号 *数量 厂商 批号 封装
添加更多采购

我的联系方式

*
*
*
相关PDF资料
MBR20L60CTG DIODE SCHOTTKY 60V 10A TO220-3
MBR2535CTLG DIODE SCHOTTKY 35V 12.5A TO220AB
MBR2545CTG DIODE SCHOTTKY 45V 30A TO220AB
MBR2550CT DIODE ARR SCHOTTKY 50V 30A TO220
MBR3045CTP DIODE ARRAY SCHOTTKY 45V ITO220S
MBR3045CT DIODE SCHOTTKY 45V 15A TO-220AB
MBR3045PTG DIODE SCHOTTKY 45V 15A SOT93
MBR3045PT DIODE SCHOTTKY 30A 45V TO-247AD
相关代理商/技术参数
MBR20H100CTH 制造商:Rochester Electronics LLC 功能描述: 制造商:ON Semiconductor 功能描述:
MBR20H100CTHE3/45 功能描述:肖特基二极管与整流器 20 Amp 100 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR20H100FCT 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers
MBR20H100FCT-G 制造商:COMCHIP 制造商全称:Comchip Technology 功能描述:Schottky Barrier Rectifiers
MBR20H150CT 功能描述:肖特基二极管与整流器 20 Amp 150 Volt Dual RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR20H150CT C0 制造商:Taiwan Semiconductor 功能描述:
MBR20H150CT/45 功能描述:肖特基二极管与整流器 20 Amp 150 Volt Dual Common Cathode RoHS:否 制造商:Skyworks Solutions, Inc. 产品:Schottky Diodes 峰值反向电压:2 V 正向连续电流:50 mA 最大浪涌电流: 配置:Crossover Quad 恢复时间: 正向电压下降:370 mV 最大反向漏泄电流: 最大功率耗散:75 mW 工作温度范围:- 65 C to + 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-143 封装:Reel
MBR20H150CT_08 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:Dual Common-Cathode High-Voltage Schottky Rectifier